Enhancement Mode III-N HEMTs

ABSTRACT

A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the gate. The device includes an AlXN layer adjacent the channel layer wherein X is gallium, indium or their combination, and a preferably n-doped GaN layer adjacent the AlXN layer in the areas adjacent to the channel access regions. The concentration of Al in the AlXN layer, the AlXN layer thickness and the n-doping concentration in the n-doped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.14/945,341, filed on Nov. 18, 2015, which is a continuation of U.S.application Ser. No. 14/464,639, filed on Aug. 20, 2014 (U.S. Pat. No.9,196,716), which is a continuation of U.S. application Ser. No.13/954,772, filed Jul. 30, 2013 (now U.S. Pat. No. 8,841,702), which isa divisional of U.S. application Ser. No. 12/108,449, filed Apr. 23,2008 (now U.S. Pat. No. 8,519,438). The disclosures of the priorapplications are considered part of and are incorporated by reference inthe disclosure of this application.

TECHNICAL FIELD

This invention relates to enhancement mode III-nitride devices.

BACKGROUND

Most power semiconductor devices, including devices such as powerMOSFETs and insulated gate bipolar transistors (IGBTs), typically havebeen fabricated with silicon (Si) semiconductor material. More recently,silicon carbide (SiC) power devices have been considered due to theirsuperior properties. III-N semiconductor devices, such as galliumnitride (GaN) devices are now emerging as attractive candidates to carrylarge currents, support high voltages and to provide very lowon-resistance and fast switching times.

Typical GaN high electron mobility transistors (HEMTs) and relateddevices are normally on, which means that they conduct current at zerogate voltage. These typical devices are known as depletion mode (D-mode)devices. However, it is more desirable in power electronics to havenormally off devices—called enhancement mode (E-mode) devices—that donot conduct current at zero gate voltage and thus avoid damage to thedevice or to other circuit components by preventing accidental turn onof the device.

FIG. 1 shows a prior art Ga-face GaN HEMT depletion mode structure.Substrate 10 may be GaN, SiC, sapphire, Si, or any other suitablesubstrate upon which a GaN device may be formed. GaN buffer layer 14 andAl_(x)GaN layer 18 on top of it are oriented in the [0 0 0 1] (C-plane)direction. The conducting channel consists of a two-dimensional electrongas (2DEG) region, shown by a dotted line in GaN buffer layer 14 in FIG.1, is formed in layer 14 near the interface between layer 14 andAl_(x)GaN layer 18. A thin, 0.6 nm AlN layer (not shown) is optionallyincluded between GaN layer 14 and Al_(x)GaN layer 18 in order toincrease the charge density and mobility in the 2DEG region. The regionof layer 14 between the source 27 and the gate 26 is referred to as thesource access region. The region of layer 14 between the drain 28 andgate 26 is referred to as the drain access region. The source 27 anddrain 28 both make contact with buffer layer 14. With no applied gatevoltage, the 2DEG region extends all the way from the source 27 to thedrain 28, forming a conducting channel and rendering the device normallyon, making it a depletion mode device. A negative voltage must beapplied to the gate 26 to deplete the 2DEG region under the gate 26, andthus to turn the device OFF.

Another related prior art III-N HEMT device is the subject ofprovisional application Ser. No. 60/972,481, filed Sep. 14, 2007,entitled “III-N Devices with Recessed Gates,” which application ishereby incorporated by reference herein.

SUMMARY

The device of the invention is an enhancement mode HEMT. Different froma depletion mode HEMT, an enhancement-mode HEMT has two requirements.First, the source and drain access regions should contain a 2DEG regionthat results in a conductivity of those regions at least as large as theconductivity of the channel region beneath the gate when the device isin the ON state. Preferably, the conductivity of these access regions isas large as possible, as access resistance is thereby reduced, thusreducing the on-resistance R_(on)—a desirable characteristic for aswitching device. The second requirement of an enhancement mode HEMT isfor the channel region underneath the gate to have no 2DEG at zero gatevoltage. A positive gate voltage therefore is required to induce a 2DEGcharge in this region beneath the gate, and thus to turn the device ON.

Therefore, at all times (whether the device is on or off), an E-modeHEMT has a 2DEG region across both the access regions. When 0V isapplied to the gate, there is no 2DEG under the gate, but when a largeenough voltage is applied to the gate (i.e., Vgs>Vth) a 2DEG regionforms underneath the gate and the channel becomes fully conductivebetween source and drain.

Briefly, the disclosed semiconductor device includes a substrate and anitride channel layer on the substrate, the channel layer including afirst channel region beneath a gate region, and two channel accessregions on opposite sides of the first channel region. The compositionof the nitride channel layer is selected from the group consisting ofthe nitrides of gallium, indium and aluminum, and combinations thereof.Adjacent the channel layer is an AlXN layer wherein X is selected fromthe group consisting of gallium, indium or their combination. An n-dopedGaN layer is adjacent the AlXN layer in the areas adjacent to thechannel access regions, but not in the area adjacent to the firstchannel region beneath the gate region.

The concentration of Al in the AlXN layer, the AlXN layer thickness andthe n-doping concentration and doping profile in the n-doped GaN layerall are selected to induce a 2DEG charge in channel access regionsadjacent the AlXN layer, without inducing any substantial 2DEG charge inthe first channel region beneath the gate, so that the channel is notconductive in the absence of a control voltage applied to the gate, butcan readily become conductive when a control voltage is applied to thegate.

A similar disclosed semiconductor device includes a substrate, a nitridechannel layer on the substrate including a first channel region beneatha gate region, and two channel access regions on opposite sides of thefirst channel region, the composition of the nitride channel layer beingselected from the group consisting of nitrides of gallium, indium andaluminum, and combinations thereof. The device also has a first AlXNlayer adjacent the channel layer wherein X is selected from the groupconsisting of gallium, indium or their combination, and a second AlXNlayer adjacent the first AlXN layer, the first AlXN layer having asubstantially higher concentration of Al than the second AlXN layer.

In this device, the concentration of the Al in each of the first andsecond AlXN layers, respectively, and their respective thicknesses areselected to induce a 2DEG charge in channel access regions adjacent thefirst AlXN layer, without inducing any substantial 2DEG charge in thefirst channel region beneath the gate, so that the channel is notconductive in the absence of a control voltage applied to the gate, butcan readily become conductive when a control voltage is applied to thegate.

Another disclosed device includes a substrate, a nitride channel layeron the substrate, including a first channel region, the material ofwhich is selected from the group consisting of nitrides of gallium,indium, aluminum and combinations thereof. The device further comprisesan AlXN layer adjacent to the channel and a III-N adjacent to the AlXNlayer, the III-N layer also including two channel access region on theopposite sides of the gate, wherein X is selected from the groupconsisting of gallium, indium or their combination, and the III materialis Al, Ga or In. The channel access regions in this device are in adifferent layer from the channel region being modulated by the gate.

In the above devices, a nitride layer, such as AlN, may be interposedbetween the AlXN layer and the nitride channel layer.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a device of the prior art.

FIG. 2 is a cross-sectional view of a device of one embodiment of theinvention.

FIGS. 3a and 3b are graphs showing the relationship of the thickness ofone layer of the device of FIG. 2 and the sheet charge density.

FIG. 4 is a cross-sectional view of a device of another embodiment ofthe invention.

FIG. 5 is a cross-sectional view of a device of another embodiment ofthe invention.

FIG. 6 is a cross-sectional view of a device of another embodiment ofthe invention.

FIG. 7 is a graph showing the transfer characteristics of the device ofFIG. 5.

FIGS. 8a-8d show a method of fabrication for the device of FIG. 9.

FIG. 9 is a cross-sectional view of a device of another embodiment ofthe invention.

FIG. 10 is a cross-sectional view of a device of another embodiment ofthe invention.

FIG. 11 is a cross-sectional view of a device of another embodiment ofthe invention.

FIG. 12 is a cross-sectional view of a device of another embodiment ofthe invention.

FIGS. 13a and 13b are cross-sectional views of a device of anotherembodiment of the invention.

FIGS. 14a and 14b are cross-sectional views of a device of anotherembodiment of the invention.

FIG. 15 is a cross-sectional view of a device of another embodiment ofthe invention.

FIG. 16 is a cross-sectional view of a device of another embodiment ofthe invention.

FIG. 17 is a cross-sectional view of a device of another embodiment ofthe invention.

FIGS. 18a and 18b are cross-sectional views of a device of two otherembodiments of the invention.

FIGS. 19-23 are cross-sectional views of devices of other embodiments ofthe invention.

FIGS. 24a, 24b and 24c are graphs depicting the operation of the deviceof FIG. 23.

DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 2 shows one embodiment of an E-mode GaN HEMT device of thisinvention. Substrate 30 may be GaN, SiC, sapphire, Si, or any othersuitable substrate for a GaN device as is known in the art. Nitridechannel layer 34 may be placed upon substrate 30. This layer may be anitride of gallium, indium or aluminum, or combinations of thosenitrides. A preferred material is GaN. Layer 34 may be madesemi-insulating, such as by doping with iron. Preferably channel layer34 may be C-plane oriented, such that the surfaces furthest from thesubstrate are [0 0 0 1] surfaces. Alternatively, it may be a semi-polarstructure with Ga termination, as is known in the art. Alternatively, itmay be grown as a non-polar structure using n-doping, as will bedescribed below.

A thin layer 38 of Al_(x)XN is placed on top of the GaN layer 34. Inthis layer, the “X” material may be gallium, indium or a combination ofthe two. A preferable material for this layer 38 is Al_(x)GaN. For thisembodiment, layer 38 will be referred to as an Al_(x)GaN layer, althoughit may be these other materials as well. In another embodiment of theinvention, layer 38 may be AlN. Al_(x)GaN layer 38 should besufficiently thin so that no significant 2DEG is established underneaththe gate 31 when zero volts is applied to the gate. Layer 35 is formedover layer 38, and it may be n-doped, as will be discussed below.

Gate 31 source 33 and drain 39 may be any suitable metal or otherelectrically conductive material. Preferably, an insulating layer 36 isformed between gate 31 and adjacent layers 35 and 38. Prior to theformation of source and drain contacts 33 and 39, respectively, layers35 and 38 are etched so that the bottoms of these source and draincontacts can make electrical contact with nitride channel layer 34.

The graphs of FIGS. 3a and 3b show a plot of the 2DEG sheet chargedensity n_(s) underneath the gate 31 of the device shown in FIG. 2 withzero volts applied to the gate, versus the Al_(x)GaN layer 38 thickness(t) for a number of different Al compositions. The graph of FIG. 3aillustrates the charge density for a device structure without anintermediate AlN layer; the graph of FIG. 3b illustrates the chargedensity for a device structure with an intermediate AlN layer.

For appropriately chosen thicknesses of the layers, it is possible tokeep the polarization-induced charge density n_(s) small, or toeliminate it completely. As seen in FIGS. 2 and 3 a and 3 b, for a givenAl concentration in the Al_(x)GaN layer 38, there is a minimum layerthickness required to form a 2DEG under the gate at zero gate bias. Forstructures in which the Al_(x)GaN thickness is less than a minimumthickness, no 2DEG region is formed underneath the gate at zero gatevoltage, which prevents the device from being normally ON. Thus theminimum thickness required to form a 2DEG underneath the gate at zerogate bias is about the same as the maximum thickness for which thedevice will be normally OFF and therefore operate as an enhancement modedevice.

The maximum thickness of the Al_(x)GaN layer 38 such that no significant2DEG charge is present in the channel region underneath the gate at zerogate voltage depends upon how much Al is present in the layer, asillustrated in FIGS. 3a and 3b . In general, the greater the Alconcentration, the thinner the layer must be to ensure that nosignificant 2DEG charge is present in the channel region underneath thegate at zero gate voltage. Referring to FIGS. 2 and 3 a, for a devicewithout an intermediate AlN layer and 20% Al (the top curve 50), nocharge will be induced if the thickness of the layer 38 is below about 6nm, whereas for 10% Al, no charge will be induced if the thickness ofthe layer 38 is below about 12 nm. Similarly, for FIG. 3b , measuredwith a device with a 0.6 nm thick intermediate AlN layer, for 20% Al(the top curve 51), no charge will be induced if the thickness of thelayer 38 is below about 1 nm, whereas for 10% Al, no charge will beinduced if the thickness of the layer 38 is below about 2 nm.

In devices where the Al_(x)GaN layer 38 is thin enough such that nosignificant 2DEG exists underneath the gate at zero gate voltage, for agiven thickness of layer 38, the leakage current when the device is inthe OFF state increases with increasing Al composition, as a result ofthe corresponding decrease in the source-drain barrier when the deviceis in the OFF state. For example, a device with a 5 nm thick Al_(x)GaNlayer that contains 20% Al will exhibit more leakage than a device witha 5 nm thick Al_(x)GaN layer containing 10% Al. Therefore, for a giventhickness of layer 38, a lower Al composition results in a higherthreshold voltage and lower leakage when the device is biased OFF, bothof which are desirable in an enhancement mode device.

However, as will be further discussed below, the maximum 2DEG chargethat can be induced in the access regions increases with increasing Alconcentration in layer 38. Increasing the 2DEG charge in the accessregions reduces the on-resistance R_(on) of the device. Therefore, theAl composition in layer 38 should be at least high enough that asufficient amount of charge can be induced in the access regions tosatisfy the R_(on) requirements of the application for which the deviceis being used.

In the embodiment of the invention shown in FIG. 2, on top of Al_(x)GaNlayer 38 is a second Al_(y)GaN layer 35. If desired, y can be 0, so thatthe layer is entirely GaN. Layer 35 is required to provide 2DEG chargein the channel access regions of layer 34 between the source 33 and thegate 31, and between the drain 39 and the gate 31. For devices in whichlayer 35 is entirely GaN, there is no net polarization-induced field inlayer 35 contributing to the formation of 2DEG charge in the channelaccess regions. Therefore, for devices in which layer 35 is undoped orunintentionally doped GaN, no significant 2DEG will be present in theaccess regions, and an enhancement mode device would not be feasible.

For devices in which y>0 in Al_(y)GaN layer 35 and layer 35 is undopedor unintentionally doped, the polarization-induced field in this layercan contribute to the formation of a 2DEG charge in the channel accessregions. For a given Al composition and thickness of layer 38 and agiven Al composition in layer 35, there is a minimum thickness of layer35 required to induce a 2DEG charge in the channel access regions. Thisminimum thickness decreases by increasing the Al composition in layer 35and/or in layer 38. For structures where layer 35 is greater than aminimum thickness, the 2DEG charge concentration in the channel accessregions increases with increasing thickness of layer 35, but can neverexceed the saturation charge concentration for the structure. Thesaturation charge concentration, which is the maximum charge that can beinduced in the 2DEG regions, depends upon the Al composition in layers35 and 38 and upon the thickness of layer 38. Increasing the Alcomposition in layer 35 increases the saturation charge concentrationfor the 2DEG region.

In view of these relationships, the thickness and Al content of layer 35are selected so that, by itself, layer 35 doesn't add charge in thestructure below, or adds an amount of charge in the access regions whichis not large enough to satisfy the R_(on) requirements of theapplication for which the device is being used. However, it isdesirable, as discussed above, to have charge present in the channelaccess regions even when there is no voltage on the gate 31, and thecharge density in the channel access regions is preferably greater thanthe charge density in the channel region underneath the gate when thegate is biased such that the device is in the ON state. One way toachieve this is to n-dope Al_(y)GaN layer 35 with Si, which acts as ann-type dopant in III-N devices. The greater the n-doping, the greaterthe resultant 2DEG charge in the channel access regions of layer 34. Apreferred doping technique is called silicon delta doping, well known inthe art. Alternatively, a uniform doping in layer 35 could be used, orother arbitrary doping profile.

If doping is used, the minimum effective amount is that required toachieve the target 2DEG charge in the channel access regions. Increasingthe 2DEG charge, of course, increases the maximum ON current of thedevice, but also causes it to have a lower breakdown voltage. As thedevice must block voltage in the OFF condition, it is undesirable tohave too low a breakdown voltage. Therefore, in selecting the amount ofn-doping, it is necessary to provide a sufficiently high breakdownvoltage for the applications for which the device will be used.

As an example, a device of the invention can have a switching voltagegreater than 2 volts, preferably 2.5 volts, and a current flow throughthe channel of at least 200 mA per mm of gate width, preferably at least300 mA per mm, when the channel is conductive. Preferably, the currentthrough the channel when the channel is conductive should be at least10,000 times the current that flows when the channel is not conductive.

Furthermore, there is a maximum charge, known as the saturation chargevalue, that is possible in the channel access regions, the magnitude ofwhich depends upon the composition of layer 38. In general, if layer 38is Al_(x)GaN, a higher Al composition in layer 38 results in a largersaturation charge value in the access regions. Therefore there is noneed to dope region 35 beyond the amount required to create the maximumcharge in the access regions.

The amount of required doping further depends upon the doping profile.If the dopant is placed near the bottom of layer 38, closer to channellayer 34, a larger 2DEG region is induced than if the dopant is placedfarther away from channel layer 34. But it is undesirable to dope tooclose to the interface between layers 38 and 34 because that wouldlessen the mobility of electrons in the 2DEG region, which wouldincrease the resistance of the 2DEG region, and thus the channelresistance.

One way to determine the aluminum concentration of layer 35 is to selectthe concentration so that, without the n-doping, no 2DEG charge will beformed in the channel access regions in the absence of the applicationof a gate voltage. Then the n-doping will create the 2DEG charge.

If desired, an additional cap nitride layer (not shown) can be placedatop layer 35. The nitride used may be In, Ga, or Al, or a combinationof one or more of them. This layer may improve the surface properties ofthe device.

During device fabrication, a portion of Al_(y)GaN layer 35 is removed inregion 36 under and around the gate region by a conventional etchingstep. This step, for example, can be a plasma RIE or ICP etch. Theresulting structure has no charge under the gate region at 0 gatevoltage, while a desired 2DEG charge still exists in the channel accessregions shown within layer 34 by the two dotted lines. Where Si-dopingis used, this 2DEG region is at least partially induced by the Si-dopedlayer 35.

Next, a conformal gate insulator 36 is deposited by methods well knownin the art, such as PECVD, ICP, MOCVD, sputtering or other well knowtechniques. This insulator 36 can be silicon dioxide, silicon nitride,or any other insulator or combination of insulators. Alternatively, atleast one of the insulators of layer 36 is a high-K dielectric, such asHfO₂, Ta₂O₅, or ZrO₂. Preferably at least one of the insulators containsor induces negative charge, thereby acting to deplete the channel regionunderneath the insulator. Examples of insulators which may act todeplete the underlying channel are AlSiN, HfO₂, and Ta₂O₅.

Next, the source and drain ohmic contacts 33 and 39 and the gate contact31 are deposited by well known techniques. The order of these processsteps may be changed, as is well known in the art. In addition, ifdesired, one or more field plates externally connected to either thegate 31 or source 33 may be used. SiN or other passivation layers mayalso be deposited over the entire structure including the contacts, asis known in the art.

Thus in the fully fabricated device, the Al_(x)GaN layer 38 under thegate is thinner than the minimum required to form a 2DEG region beneaththe gate at 0 gate voltage. The upper limit of this layer 38 thicknessis called the “critical thickness.” The minimum gate voltage for which a2DEG region exists underneath the gate, thus rendering the channelconductive, is called the device threshold voltage V_(th). For example,a V_(th) of 0-3 volts may be used. If, for example, a V_(th) of 3 voltswere selected, a positive gate voltage greater than 3 volts is requiredto turn the device ON, thus inducing a 2DEG region under the gate regionand achieving enhancement mode operation where current is conductedbetween source 33 and drain 39. If the gate voltage were less than 3volts, the device would remain OFF. A higher threshold voltage ispreferable to prevent accidental turn on of the device and to decreaseleakage currents when it is intended to be OFF.

Without using the gate insulator 36, the maximum positive bias voltagethat may be applied to the gate is limited by the schottky barrierforward turn on voltage of the gate junction, thus limiting the maximumfull channel current. Using a gate insulator, a higher positive bias maybe applied to the gate to accumulate a high channel 2DEG charge underthe gate region when the device is ON, thus achieving substantialoperating current. Furthermore, the gate insulator is also used toincrease the external threshold voltage of an already normally-offdevice. In the case where the gate insulator acts to deplete charge fromthe underlying channel, the intrinsic threshold voltage is increased,and OFF state leakage decreases, since the source-drain barrier when thedevice is in the OFF state is increased.

Another embodiment of the device of the invention is shown in FIG. 4.The layers that are the same as in FIG. 2 have the same referencenumerals. This device is similar to the one in FIG. 2, except that anitride buffer layer 32 is included in between the nitride channel layer34 and the substrate 30. Buffer layer 32 may be a nitride of gallium,indium or aluminum, or combinations of those nitrides. The compositionof this buffer layer 32 is chosen such that the bandgap of the materialis greater than that of the material of the channel layer 34, and thelattice constant is smaller than that of channel layer 34. Therefore,these two layers must be different materials. The larger bandgap ofbuffer layer 32 creates a back-barrier which reduces source-to-drainleakage currents when the device is in the OFF state. The smallerlattice constant of buffer layer 32 causes the overlying material of thechannel layer 34 to be under compressive strain, which modifies thepolarization field in these overlying materials in such a way thatreduces the polarization-induced contribution to the 2DEG channelcharge, thereby increasing the threshold voltage and reducingsource-to-drain leakage currents when the device is in the OFF state.If, for example, buffer layer 32 is Al_(b)In_(c)Ga_(1-b-c)N, increasingb while keeping c constant increases the bandgap and decreases thelattice constant of layer 32, while increasing c while keeping bconstant decreases the bandgap and increases the lattice constant.Therefore b and c are chosen in such a way that ensures that the bandgapof the material of buffer layer 32 is greater than that of the materialof the channel layer 34, and the lattice constant of buffer layer 32 issmaller than that of channel layer 34.

When GaN is used for channel layer 34, buffer layer 32 is preferablyAl_(z)GaN, where z is between a finite value greater than 0, and 1. TheAl_(z)GaN buffer layer 32 acts as a back-barrier, further increasing thesource-drain barrier when the device is in the OFF state and increasingthe device threshold voltage, as compared to the device of FIG. 2.

In the device shown in FIG. 4, the GaN layer 34 and AlGaN layer 38,which both overlie the Al_(z)GaN buffer layer 32 are conformallystrained to the Al_(z)GaN, which modifies the polarization fields inthose two layers and thereby reduces the polarization-inducedcontribution to the 2DEG channel charge. The net result of these effectsis that the “critical thickness” of the Al_(x)GaN layer 38 is increasedas compared to layer 38 of the device of FIG. 2. Having a thickerAl_(x)GaN layer 38 in the device of FIG. 4, with buffer layer 32, ishelpful in enabling manufacturability of these devices.

Source and drain contacts 33 and 39, respectively, are formed throughthe top surface of the device. Prior to the formation of source anddrain contacts 33 and 39, respectively, layers 35, and 38 are etched sothat the bottoms of these source and drain contacts can make electricalcontact with nitride channel layer 34.

A preferred embodiment of the device of the invention is shown in FIG.5. A GaN buffer layer 41 is grown on a SiC substrate 40, followed by thedeposition of a 3 nm thick Al_(0.2)GaN layer 43, which is less than thecritical thickness and hence does not induce any 2DEG region in area ofthe underlying GaN layer beneath gate 45. Next a 20 nm thick GaN layer44 delta doped with Si between about 6×10¹² atoms/cm² and 8×10¹²atoms/cm² is formed atop Al_(0.2)GaN layer 43. The Al_(0.2)GaN layer 43thickness in the area beneath the gate 45 needs to be about 5 nm thickor less. Source and drain regions 47 and 49 are formed on the topsurface. Prior to the formation of source and drain contacts 47 and 49,respectively, layers 46, 44 and 43 are etched so that the bottoms ofthese source and drain contacts can make electrical contact with nitridebuffer layer 41.

An alternative embodiment of the device of FIG. 5 is shown in FIG. 6.The layers that are the same as in FIG. 5 have the same referencenumerals. However in this embodiment, a thin intermediate AlN layer 48is interposed between layers 41 and 43. Where such an intermediate AlNlayer 48 is present, and where Al_(0.2)GaN is used for layer 43, theAl_(0.2)GaN layer 43 thickness in the area beneath the gate 45 needs tobe about 1 nm or less.

Still referring to FIG. 5, a selective gate recess etch was performed toetch away the Si doped GaN layer 44 under and around the gate region 45,such that the gate recess etch stops at the Al_(0.2)GaN layer 43.Selective etches are well known in the art that etch GaN (having no Alcontent) faster than AlGaN. The etch rate through the AlGaN layer 43depends upon the percentage of Al in the layer, as these selectiveetches etch faster through layers with low aluminum content than throughlayers with higher Al content. Thus, according to the invention, aselective etch will etch in the area beneath gate 45 through the GaNlayer 44 (that has no aluminum) at a faster rate than throughAl_(0.2)GaN layer 43, allowing Al_(0.2)GaN layer 43 to act as an etchstop. The etch chemistry used is BCl₃/SF₆. The selectivity of theBCl₃/SF₆ selective etch of GaN over AlGaN(x=0.2) is about 25. When AlGaNis etched, the AlF₃ that is formed is non-volatile. Therefore the etchrate is reduced.

The higher the concentration of Al in layer 43, the more effective itwill be as an etch stop. A preferred etch process for this purpose isinductively coupled plasma ion etching (“ICP”) using a BCl₃/SF₆ etchant.Other Cl₂ or Fl₂ based reactive ion etching (“RIE”) or plasma etchingprocesses known in the art may be used.

A SiN layer 46 is then deposited to form the gate insulator, for exampleusing a metal-organic CVD (MOCVD) or other suitable deposition processknown in the art. The device is completed by forming source and drainohmic contacts and a gate contact in a conventional manner to completethe structure of FIGS. 5 and 6. A further SiN passivation layer may beadded to the full structure. The transfer characteristics of this devicedemonstrated enhancement mode operation with a +3 volt threshold, asshown in FIG. 7.

A method of fabrication of a device of one embodiment of the inventionis illustrated in FIGS. 8a-8d . Referring to FIG. 8a , on top ofsubstrate 60 are formed, in order, III-nitride layers 64, 68 and 65. Ontop of GaN layer 65 is formed a passivation layer 67 of SiN. Next, asshown in FIG. 8b , layer 67 is etched away in the gate region 69 usingan etch chemistry which does not substantially etch III-nitridematerials, such as CF₄/O₂, CHF₃ or SF₆. The etch process used results ina slanted sidewall, as shown, and the underlying layer 65 is not etched.This sidewall slant of opening 69 is achieved by methods well known inthe art, for example by choosing a photoresist which has a slantedsidewall as a mask for the etch. Next, as seen in FIG. 8c , III-nitridelayer 65 is etched in the gate region using previously etched layer 67as an etch mask. The etch chemistry used must have certain properties.It must selectively etch nitride layer 65 at a higher rate than theunderlying nitride layer 68. Thus, layer 68 serves as an etch stop, andso the etch terminates at the interface between layers 65 and 68 with ahigh level of precision. The etch chemistry must also etch passivationlayer 67 at a rate which is the same or similar to the etch rate oflayer 65. This ensures that the sidewall of opening 69 through layers 65and 67 are tapered (as opposed to vertical), as shown. Next, as shown inFIG. 8d , a gate insulator 62, such as SiN, is deposited conformallyover the surface of opening 69 and the top of layer 67.

To complete the device, as shown in FIG. 9, source 63, drain 70, andgate 61 electrodes are deposited. Prior to the formation of source anddrain contacts 63 and 70, respectively, layers 67, 65, and 68 are etchedso that the bottoms of these source and drain contacts can makeelectrical contact with nitride channel layer 64. In the embodiment ofthe invention shown in FIG. 9, the substrate and III-nitride materiallayers are similar to those of FIG. 2. However, the embodiment shown inFIG. 9 also contains a dielectric passivation layer 67 which covers thesurface of the gallium nitride layer 65 furthest from substrate. Layer67 is comprised of any material suitable for surface passivation ofIII-nitride devices as is known in the art, for example, SiN. Nitridelayer 65 and passivation layer 67 are tapered down as shown underneaththe sides of the gate metal. Having a tapered sidewall of the gate (asopposed to a perfectly vertical one) allows the gate metal also to actas a slant field plate in region 66, which increases the devicebreakdown voltage by decreasing the maximum electric field in thedevice.

Another embodiment of the invention is a vertical device shown in FIG.10. In a vertical device the source and gate contacts 78 and 79,respectively, are on the top surface of the device while the draincontact 80 is at the bottom, as shown. Vertical devices have the benefitof using less wafer area for a similar size device as compared to thelateral devices described earlier.

To make a vertical device for enhancement mode operation, a lightlydoped (n−) GaN drift layer 72 is incorporated below the GaN channellayer 74. The thickness of drift layer 72 determines the blockingvoltage capability of the device, as this layer sets the effectivegate-to-drain spacing. The doping amount for layer 72 is chosen tomaximize its conductivity, thereby minimizing its resistance, and tosupport the required blocking voltage, as discussed earlier. If thedoping is too low, the resistance can be too high. If the doping is toohigh, the blocking voltage can be too low.

Blocking layer 73 blocks direct current flow from source 78 to drain 80.If such direct current flow were permitted, it would provide anundesirable, parasitic leakage current path in the device. Blockinglayer 73 can be made in various ways. In one method, p-type regions 73are formed by suitable techniques, for example ion implantation, or byusing a 2-step growth process in which a p-type layer 73 is growncompletely across n− GaN layer 72, and is then removed under the gateregion (where the current path is indicated by the arrows), followed bya growth of layers 74 and above. The material of layer 74 merely fillsin where layer 73 had been removed.

In another method an insulating GaN layer is used for the blocking layer73. This can be formed by suitable techniques such as doping GaN layer73 with iron, or by an isolation ion implantation of Al or othersuitable material that results in the placement of an insulating GaNmaterial in the blocking regions 73. Other methods, such as a regrowthof material in layer 73 may also be used.

Another embodiment of the invention, shown in FIG. 11, employs ablocking layer, and a highly doped n+ GaN contact layer 81 is placedbelow the GaN drift layer 72. The entire structure is grown on asemi-insulating substrate 71. Prior to deposition of drain ohmic contact80, via 82 is formed by etching through substrate 71. The drain ohmiccontact 80 makes contact with layer 81 through via 82.

The drain contact to layer 81 may be made in other ways. As shown inFIG. 11 the device is grown on a conducting substrate 71, which may, forexample, be conducting silicon, GaN or SiC. In this structure, via 82 isnot required, since the drain contact 80 is simply made to the bottom ofthe substrate 71. In the embodiment of FIG. 11 which uses an insulatingsubstrate, a via is etched through the substrate through which the draincontact with layer 81 is made.

In another implementation shown in FIG. 12, a lateral mesa is etched asshown, and the drain contact 80 is made on the top side of the highlydoped GaN contact layer 81.

Another embodiment of this invention is show in FIGS. 13a and 13b . Thedevice of FIG. 13b includes a substrate 90, a nitride channel layer 94on the substrate, including a first channel region shown as a dottedline 102 in layer 94 beneath the gate 91. The material of the nitridechannel layer 94 is selected from the group consisting of nitrides ofgallium, indium and aluminum, and combinations thereof. The device hasan AlXN layer 98 adjacent the channel layer 94, where X is selected fromthe group consisting of gallium, indium or their combination. A III-Nlayer 95 is adjacent the AlXN layer, that includes two channel accessregions shown by dotted lines on opposite sides of the gate 91 and thefirst channel regions 102. This III-N layer can be GaN, InN or acombination of the two, preferably GaN. These two channel access regionsare respectively connected to the source 93 and the drain 99. In oneembodiment of this device, there is an Al_(m)GaN layer 100 atop theIII-N layer 95 that is used for enabling the 2DEG charge in the channelaccess regions. m is in the range of 0.1 to 0.3 and the thickness of thelayer 100 is in the range of 100-500 Angstroms, the composition andthickness range being selected to achieve an equivalent sheet resistanceof under 700 ohms/square in this region.

In this embodiment, the 2DEG channel access regions are formed in adifferent layer 95 from the first channel region 102 controlled by thegate 91. In an enhancement-mode device, the channel access regions needto be as conductive as possible at all times, whereas the first channelregion 102 beneath the gate needs to be depleted of conducting charge inthe absence of a control voltage applied to the gate 91. The device inFIGS. 13a and 13b , having the charge in the channel access regions in adifferent layer 95 from the layer 94, that contains the charge 102beneath the gate that is only present when the device is “ON”, has moreflexible design parameters than devices that have their the channelaccess regions and their first channel region in the same layer ordevices that involve substantial trade-offs in access region charge vs.the charge in the nitride channel layer 94 that is modulated by thegate.

FIG. 13a illustrates a device where there is no voltage applied to thegate, and FIG. 13b shows the device when a positive control voltage isapplied to gate. The material layers are similar to the layers in priorembodiments, except that the thicknesses and compositions of layers 95and 100 are adjusted so that, in the absence of a control voltageapplied to the gate, a substantial 2DEG channel exists in the accessregions in layer 95 but not in the first channel region 102. As seen inFIG. 13b , when a positive control voltage is applied to the gateelectrode 91, a conducting 2DEG channel shown by the dotted line isformed in layer 94 adjacent to the interface between layers 94 and 98 inregion 102 underneath the gate 91. Further, a vertical conducting regionis formed in layer 95 adjacent the sidewall 97 of insulator 96,resulting from the accumulation of charge from the positive controlvoltage on the gate. In addition, a path is formed via the mechanisms oftunneling through the barrier or emission over the barrier or both,through layer 98 which connects the 2DEG and conducting regions in layer95 to the conducting 2DEG channel in region 94, completing theconduction path from source 93 to drain 99. Thus, an important featureof this structure is that the gate is modulating charge both beneathitself and along its sides when a switching voltage is applied to thegate.

When a switching voltage is applied to the gate, the conducting channelextends all the way from the source 93 to the drain 99, and the deviceis turned ON. In this embodiment, source 93 and drain 99 extenddownwardly from the surface of the device at least deep enough so thatthey are in electrical contact with the 2DEG region in layer 95 (shownby the dotted lines), but not necessarily any deeper. This is differentfrom previous embodiments where the 2DEG access regions are in the samelayer as the 2DEG first channel region that is formed under the gate inthe presence of a gate voltage above a threshold, where the source anddrain contacts must extend downwardly even farther.

This device of this embodiment of the invention may be constructed in anumber of ways. For example, source 93 and drain 99 may be formed bydepositing a metal layer 100, such as a Ti/Al/Ni/Au stack, in the sourceand drain regions 93 and 99, and then annealing the device at anelevated temperature such that the metal and underlying semiconductormaterial form a conducting alloy which extends at least beyond theinterface of layers 100 and 95, as shown in FIGS. 13a and 13b .Alternatively, source 93 and drain 99 may be formed by implanting ann-type dopant, such as silicon, into layers 100 and 95 in the placeswhere the source and drain are to be formed and in the source and drainaccess regions, and then depositing a metal, such as Ti, Al, Ni, Au, ora combination thereof atop the implanted areas to serve as the sourceand drain contacts. In this case, source 93 and drain 99 are comprisedof a combination of the metal and the implanted semiconductor material.

Source 93 and drain 99 may extend deeper than the minimum depthillustrated in FIGS. 13a and 13b . As shown in FIGS. 14a and 14b , thesource and drain 93 and 99 extend downwardly beyond the interface oflayers 94 and 98, as will be discussed below. As shown in FIG. 14a , theAl compositions of layers 98, 95, and 100 are adjusted such that a 2DEGregion shown by the dotted line is present in the access regions inlayers 95 and 94, but not underneath the gate 91, in the absence of anapplied gate voltage.

By way of example, the embodiment of the invention shown in FIGS. 14aand 14b can be achieved with the following parameters for layers 98, 95,and 100: layer 98 is a 3 nm thick Al_(x)GaN layer with x=0.23; layer 95is a 3 nm thick GaN layer; and layer 100 is a 15 nm Al_(m)GaN layer withm=0.23. In this example, a 2DEG region is expected to be present in theaccess regions in layers 95 and 94, shown by the dotted lines, and the2DEG sheet charge density in layer 94 is approximately two times that inlayer 95.

As shown in FIG. 14b , when a positive control voltage is applied to thegate electrode 91, a conducting 2DEG channel 102 is formed beneath gate91, shown by the dotted line in layer 94, adjacent the interface betweenlayers 94 and 98 in region 102 underneath the gate. Further, a verticalconducting region is formed in layer 95 adjacent sidewall 97 ofinsulator 96, resulting from the accumulation of charge from thepositive control voltage on the gate 91. In addition, a path via themechanisms of tunneling through the barrier or emission over thebarrier, or both, is formed through layer 98. This path connects the2DEG channel access regions in layer 95 to the conducting 2DEG channelin layer 94, completing the conduction path from source 93 to drain 99.Thus, when the device is ON, as shown in FIG. 14b , the conductingchannel from source 93 to drain 99 comprises the 2DEG channel in layer94 underneath the gate, along with the two in-line 2DEG channel accessregions in layer 95 which are connected by the vertical conductingregions in layers 95 and 98. This is shown in FIG. 14 b.

This structure of this device reduces the access resistance and therebyreduces the device ON resistance R_(on), because the contacts for thesource 93 and drain 99 extend downwardly beyond the interface of layers94 and 98. That allows the 2DEG regions in the access regions of layers95 and 2DEG conductive region of layer 94 that is present when thedevice is ON, to form a conductive path between the source 93 and drain99.

The device of FIG. 14 will operate properly as an enhancement-modedevice if source 93 and drain 99 extend downwardly just beyond theinterface of layers 100 and 95, as was the case for the device in theembodiment shown in FIG. 13. However, in that case the source 93 anddrain 99 will only contact the 2DEG region in layer 95 and not that inlayer 94, so the access resistance and device on resistance R_(on)remain similar to the device in FIG. 13.

Additionally, layers 95, 94, 98 and/or layer 100 may be doped with ann-type dopant, such as Si, to further enhance 2DEG charge in the accessregions of layer 95 and/or layer 94. Furthermore, an additional III-Nlayer (not shown), such as AlInGaN, may be included on top of Al_(m)GaNlayer 100 in the devices shown in FIGS. 13 and 14, to help mitigatedispersion in the device.

Another embodiment of the device of the invention is shown in FIG. 15.The layers that are the same as the devices in FIGS. 13 and 14 have thesame reference numerals. This device is similar to the one shown in FIG.13, except that a nitride buffer layer 92 is included between thenitride channel layer 94 and the substrate 90. This buffer layer has thesame parameters and is used for the same purpose described above withrespect to the embodiment shown in FIG. 4.

Another embodiment of the invention is shown in FIG. 16. This device isthe same as that of FIG. 13, except that it has no buffer layer betweenthe nitride channel layer 94 and the substrate 90, but has a thin AlNlayer 101 is included in between GaN layer 95 and Al_(m)GaN 100. ThisAlN layer 101 causes an increase in the charge density and electronmobility in the 2DEG charge in the access regions in layer 95, therebydecreasing the access resistance and thus the device on-resistanceR_(on). Preferably this layer should be between about 4 Å and 30 Åthick.

Another embodiment of the invention is shown in FIG. 17. This device isthe same as that of FIG. 14, except that a thin AlN layer 103 isincluded between channel layer 94 and Al_(x)GaN 98. This AlN layer 103causes an increase in the charge density and electron mobility in the2DEG charge access regions in layer 94, thereby decreasing the accessresistance and thus device on-resistance R_(on). Additionally, the gate91 is deposited in the gate recess opening, which was formed by firstrecess etching and then filling the recess with an insulator 96, asdiscussed in connection with earlier embodiments, and the gate recessstops precisely at the upper surface of layer 98, as shown in FIG. 17.

Another embodiment of this invention is shown in FIGS. 18a and 18b .This device is the same as that of FIG. 17, except that the Al_(x)GaNand AlN layers between layers 95 and 94 have been omitted. Furthermore,the recess etched gate 91 extends below the interface between layers 95and 94 further down inside the bulk of layer 94, as shown in FIG. 18a ,and the source 93 and drain 99 extend only into layer 95 so as tocontact the 2DEG region shown by the dotted line in layer 95, but not sofar as to contact layer 94.

The difference between the device of FIG. 18a and the device of FIG. 18bis that, in FIG. 18b , the gate insulator region 96 stops precisely atthe top of nitride channel layer 94, but in the device of FIG. 18a , thegate insulator region 96 extends beyond the interface between layers 94and 95. When a positive control voltage is applied to the gate 91 of thedevice of FIG. 18b , the conducting channel produced underneath the gate91 may be a 2DEG region, or alternatively may be an electronaccumulation layer.

Although the transfer characteristics of the device of FIG. 18a may beinferior compared to those of the device in FIG. 18b , this device ismore tolerant to variations in processing conditions, since it does notrely upon a precise etch stop at the top of layer 94 to operateproperly. It is therefore more easily manufacturable.

Another embodiment of this invention is shown in FIG. 19. This device issimilar to that of FIG. 13, except that all of the III-nitride layersare grown in a nonpolar or semipolar (Ga terminated) orientation (ascompared to the [0 0 0 1] orientations of the other embodiments of thisinvention). Using semipolar or nonpolar layers increases the thresholdvoltage of the device as well as increasing the barrier between sourceand drain when the device is in the OFF state, thereby reducing OFFstate leakage. However, in this structure of FIG. 19, Al_(m)GaN layer100 and/or GaN layer 95 is doped with an n-type dopant, such as Si, toensure that a conducting channel exists at all times in the 2DEG accessregions in layer 95.

More embodiments of this invention are shown in FIGS. 20-22. These areall vertical devices similar to those shown in FIGS. 10-12, except thatthe 2DEG access regions are contained in layer 116, and when the deviceis biased ON, a vertical conduction region is induced in region 116 bythe gate 119, and a conducting path is formed through layer 115, toconnect the access regions in layer 116 to the 2DEG region in layer 114underneath the gate 119, much like the device in FIG. 13.

Another embodiment of this invention is shown in FIG. 23. This device issimilar to the device in FIG. 14, but the slanted gate 131, the SiNpassivation layer 137 and the gate insulator layer 132 make this devicesimilar to the device of FIG. 9.

A device having the structure shown in FIG. 16 was fabricated and hadthe output characteristics shown in FIGS. 24a, 24b and 24c . Thethreshold voltage V_(th) was 1.5V, the ON-resistance R_(on) was 12ohm-mm, and the maximum source-drain current I_(max) was 700 mA/mm at agate voltage V_(G)=8V.

There may be many variations on the structures and methods describedabove that are, or will become apparent to those skilled in the art,that may be used in connection with, but without departing from thespirit and scope of this invention.

What is claimed is:
 1. A III-N semiconductor device, comprising: anitride channel layer including a first channel region beneath aconductive gate contact, the composition of the nitride channel layerbeing selected from the group consisting of nitrides of gallium, indium,aluminum, and combinations thereof; and a source contact and a draincontact, wherein the source contact and the gate contact are each overnitride channel layer and the drain contact is below on an opposite sideof the nitride channel layer from the gate contact; wherein the firstchannel region is non-conductive in the absence of a switching voltageapplied to the gate contact, but is conductive in the presence of aswitching voltage greater than a threshold voltage applied to the gatecontact.
 2. The device of claim 1, wherein the device includes a GaNdrift layer between the nitride channel layer and the drain contact. 3.The device of claim 2, wherein the GaN drift layer is a lightly doped(n−) layer.
 4. The device of claim 2, wherein the device includes acurrent blocking layer between the nitride channel layer and the GaNdrift layer.
 5. The device of claim 4, wherein the current blockinglayer is a doped GaN layer.
 6. The device of claim 4, wherein the deviceincludes channel access regions on opposite sides of the first channelregion, and the current blocking layer is below the channel accessregions but not below the first channel region.
 7. The device of claim4, wherein the device includes a substrate, and further comprises anadditional nitride layer between the substrate and the GaN drift layer,wherein a via is formed through the substrate and the drain makescontact with the additional nitride layer through the via.
 8. The deviceof claim 7, wherein the additional nitride layer comprises highly dopedn+ GaN.
 9. The device of claim 1, wherein the device includes channelaccess regions on opposite sides of the first channel region, whereinthe device comprises an AlXN layer above the channel layer in the areasadjacent to the channel access regions but not in the area adjacent tothe first channel region, wherein X is selected from the groupconsisting of gallium, indium or their combination.
 10. The device ofclaim 9, wherein the device comprises an insulator layer between thegate contact and the nitride channel layer.
 11. The device of claim 1,wherein the device is an enhancement mode device.
 12. A III-Nsemiconductor device, comprising: a nitride channel layer including afirst channel region beneath a conductive gate contact, and channelaccess regions on opposite sides of the first channel region, thecomposition of the nitride channel layer being selected from the groupconsisting of nitrides of gallium, indium, aluminum, and combinationsthereof; an AlXN layer above the channel layer, wherein X is selectedfrom the group consisting of gallium, indium or their combination; and asource contact and a drain contact, wherein the source contact and thegate contact are each over the nitride channel layer and the draincontact is on an opposite side of the nitride channel layer from thegate contact; and a III-N drift layer between a substrate and thenitride channel layer; wherein a via is formed through the substrate andthe drain contact is electrically connected to the III-N drift layerthrough the via in a first channel region beneath the gate contact. 13.The device of claim 12, wherein the concentration of Al and thickness ofthe AlXN layer is selected to induce a 2DEG charge in the channel accessregions adjacent the AlXN layer without inducing any substantial 2DEGcharge in the first channel region, so that a channel comprising the2DEG charge is not conductive in the absence of a switching voltageapplied to the gate, but is conductive when a switching voltage greaterthan a device threshold voltage is applied to the gate.
 14. The deviceof claim 13, wherein the device is an enhancement mode device.
 15. Thedevice of claim 12, wherein the III-N drift layer is a lightly doped(n−) GaN layer.
 16. A III-N semiconductor device, comprising: a nitridechannel layer including a first channel region beneath a gate contactand channel access regions on opposite sides of the first channelregion, the channel access regions connected to source contacts, whereinthe composition of the nitride channel layer is selected from the groupconsisting of nitrides of gallium, indium, aluminum, and combinationsthereof; a III-N layer above the nitride channel layer and surroundingthe gate contact; a III-N drift layer below the nitride channel layer;and a drain contact connected to the III-N drift layer; wherein thefirst channel region is non-conductive in the absence of a switchingvoltage applied to the gate contact, but is conductive in the presenceof a switching voltage greater than a threshold voltage applied to thegate contact.
 17. The device of claim 16, wherein the III-N drift layeris a lightly doped (n−) GaN layer.
 18. The device of claim 17, whereinthe device includes a doped GaN current blocking layer between thenitride channel layer and the GaN drift layer.
 19. The device of claim18, wherein the GaN current blocking layer is below the channel accessregions but not below the first channel region.
 20. The device of claim16, wherein the device is an enhancement mode III-N device.